Growth rate of the Richtmyer-Meshkov instability when a rarefaction is reflected

被引:65
|
作者
Wouchuk, JG [1 ]
机构
[1] Univ Castilla La Mancha, ETSI Ind, E-13071 Ciudad Real, Spain
关键词
D O I
10.1063/1.1369119
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
A model is presented that calculates the asymptotic growth rate of the linear Richtmyer-Meshkov instability when a rarefaction is reflected at the contact surface. The result is valid for any value of the incident shock Mach number and initial fluids parameters. There is very good agreement with previous numerical simulations and experiments done at high compressions. The technique developed in the model is seen to be highly accurate and allows us a fast evaluation of the asymptotic normal velocity at the interface. (C) 2001 American Institute of Physics.
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页码:2890 / 2907
页数:18
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