Device characteristics of short-channel polymer field-effect transistors

被引：37

作者：

Hirose, Takeshi ^{[1
]}

Nagase, Takashi ^{[1
,2
]}

Kobayashi, Takashi ^{[1
,2
]}

Ueda, Rieko ^{[3
]}

Otomo, Akira ^{[3
]}

Naito, Hiroyoshi ^{[1
,2
]}

机构：

[1] Osaka Prefecture Univ, Dept Phys & Elect, Sakai, Osaka 5998531, Japan

[2] Osaka Prefecture Univ, Res Inst Mol Elect Devices, Sakai, Osaka 5998531, Japan

[3] Natl Inst Informat & Commun Technol, Kobe Adv ICT Res Ctr, Kobe, Hyogo 6512492, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 08期

关键词：

ionisation potential; organic field effect transistors; organic semiconductors; space-charge limited devices; THIN-FILM TRANSISTORS; LENGTH;

D O I：

10.1063/1.3480549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of channel materials on the electrical characteristics of organic field-effect transistors (OFETs) with short-channel lengths ranging from 1 mu m to 30 nm is investigated using polymer semiconductors. The current-voltage characteristics of short-channel OFETs strongly depend on the electrode/organic semiconductor contacts, and the parabolic output current due to space-charge limited current can be reduced by increasing the ionization potential of organic semiconductors. Transistor operations with a high on/off ratio over 10(3) are achieved in OFETs with 30 nm length channels. (C) 2010 American Institute of Physics. [doi:10.1063/1.3480549]

引用

页数：3

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