Spatiotemporal dynamics of excitons in monolayer and bulk WS2

被引：72
|
作者：
He, Jiaqi [1 ,2 ]
He, Dawei [1 ]
Wang, Yongsheng [1 ]
Cui, Qiannan [2 ]
Ceballos, Frank [2 ]
Zhao, Hui [2 ]
机构：
[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Minist Educ, Key Lab Luminescence & Opt Informat, Beijing 100044, Peoples R China
[2] Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA
来源：
NANOSCALE | 2015年 / 7卷 / 21期
基金：
美国国家科学基金会;
关键词：
FEW-LAYER MOS2; SINGLE-LAYER; EXFOLIATION; MONO; FABRICATION; TRANSISTORS; DISULFIDE; TRANSPORT; GROWTH; SCALE;
D O I：
10.1039/c5nr00188a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Spatiotemporal dynamics of excitons in monolayer and bulk WS2 at room temperature is studied by transient absorption microscopy in the reflection geometry. Excitons are formed from photocarriers injected by a tightly focused 390 nm pump pulse, and monitored by detecting different reflection of a time-delayed and spatially scanned 620 nm probe pulse. We obtain exciton lifetimes of 22 +/- 1 and 110 +/- 10 ps in monolayer and bulk WS2, respectively. Both lifetimes are independent of the exciton density, showing the absence of multi-exciton recombination processes. Exciton diffusion coefficients of 60 +/- 20 and 3.5 +/- 0.5 cm(2) s(-1) are obtained in monolayer and bulk samples, respectively. These results provide a foundation for understanding excitons in this new material and its optoelectronic applications.
引用
收藏
页码：9526 / 9531
页数：6
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