Scintillation Characteristics of Indium Doped Cesium Iodide Single Crystal

被引：10

作者：

Wu, Yuntao ^{[1
,2
]}

Ren, Guohao ^{[3
]}

Meng, Fang ^{[1
,2
]}

Chen, Xiaofeng ^{[3
]}

Ding, Dongzhou ^{[3
]}

Li, Huanyin ^{[3
]}

Pan, Shangke ^{[3
]}

Melcher, Charles L. ^{[1
,2
]}

机构：

[1] Univ Tennessee, Scintillat Mat Res Ctr, Knoxville, TN 37996 USA

[2] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[3] Chinese Acad Sci, R&D Ctr Synthet Crystal, Shanghai Inst Ceram, Shanghai 201899, Peoples R China

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Afterglow; CsI:In; energy resolution; non-proportionality; LUMINESCENCE PROPERTIES; GROWTH; EU2+; SUPPRESSION; AFTERGLOW; TL;

D O I：

10.1109/TNS.2015.2412523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium doped cesium iodide (CsI:In) single crystals were grown by the Bridgman method. A comparison study of the scintillation properties of our CsI: In and commercially available CsI:Tl single crystals was carried out, including scintillation decay time, energy resolution, non-proportionality, absolute light yield, and afterglow. Under X-ray excitation, the CsI: In emission corresponds to a symmetrical broad band centered at 545 nm. Its scintillation decay time is 1.99 +/- 0.02 mu s at room temperature under Cs-137 gamma-ray excitation. The CsI: In light yield was found to be 34, 700 +/- 1735 photons per MeV with an energy resolution of 9.1 +/- 0.3%, based on the pulse height spectra under Cs-137 excitation. The afterglow level of CsI:In over 130 ms after pulsed X-ray excitation was two orders of magnitude higher than that of CsI:Tl.

引用

页码：571 / 576

页数：6

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