Large-grained polycrystalline silicon thin-film solar cells using AIC seed layers

被引：3

作者：

Gall, S ^{[1
]}

Schneider, J ^{[1
]}

Klein, J ^{[1
]}

Muske, M ^{[1
]}

Rau, B ^{[1
]}

Conrad, E ^{[1
]}

Sieber, I ^{[1
]}

Fuhs, W ^{[1
]}

Van Gestel, D ^{[1
]}

Gordon, I ^{[1
]}

Van Nieuwenhuysen, K ^{[1
]}

Carnel, L ^{[1
]}

Beaucarne, G ^{[1
]}

Poortmans, J ^{[1
]}

Stöger-Pollach, M ^{[1
]}

Schattschneider, P ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488295

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Large-grained polycrystalline silicon (poly-Si) films were prepared on foreign substrates by epitaxial thickening of seed layers. The seed layers were formed by the aluminum-induced layer exchange (ALILE) process which is based on aluminum-induced crystallization (AIC) of amorphous. silicon (a-Si). The epitaxial thickening was carried out at two different temperature regimes (low- and high-temperature approach). Using these large-grained poly-Si films first thin-film solar cells have been prepared. The best poly-Si thin-film solar cell obtained so far has reached an efficiency of 4.5% (high-temperature approach).

引用

页码：975 / 978

页数：4

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