Characterization of low-temperature microwave annealed PZT thin films with various thicknesses

被引：0

作者：

Bhaskar, Ankain ^{[1
]}

Chang, T. H. ^{[1
]}

Chang, H. Y. ^{[2
]}

Cheng, S. Y. ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

[2] Natl Taiwan Ocean Univ, Dept Marine Engn, Keelung, Taiwan

[3] Ind Technol Res Inst, Mat & Chem Res Lab, Hsinchu, Taiwan

来源：

2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2007年

关键词：

ferroelectric; PZT; perovskite phase;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric lead zirconium titanate (Pb(ZrxTi1-x)O-3) thin films with various thicknesses were fabricated on Pt/Ti/SiO2/Si substrates using the sol-gel method with 2.45 GHz microwave energy. Investigations have been made on the crystal structure, surface morphology, dielectric and ferroelectric properties of the films. The thicknesses of PZT film were in the range of 99 to 420 mn, and films were annealed at 450 degrees C for 30 min. The 99 and 168 nm-thick PZT films have mixed pyrochlore and perovskite phases. Above 168 nm-thick PZT films have complete perovskite phase. The full width at half maximum (FWHM), and the surface roughness were decreased as the film thickness increased. Relative dielectric constant and remnant polarization increased as the film thickness increased, which reflect the difference in crystallinity.

引用

页码：519 / +

页数：2

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