Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using bisazido dimethylaminopropyl gallium as single source precursor

被引：2
|
作者：
Wohlfart, A
Devi, A
Hipler, F
Becker, HW
Fischer, RA
机构：
[1] Lehrstuhl Anorgan Chem Organometall & Mat Chem 2, D-44780 Bochum, Germany
[2] Lehrstuhl Expt Phys 3, D-44780 Bochum, Germany
来源：
JOURNAL DE PHYSIQUE IV | 2001年 / 11卷 / PR3期
关键词：
D O I：
10.1051/jp4:2001387
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the growth of highly crystalline and oriented alpha -GaN layers showing a porous-ae microstructure. Employing specific CVD conditions, GaN layers with such morphological features were obtained and characterized in detail by XRD methods. The layer composition was analysed by XPS, AES as well as RES, and the morphology was investigated by SEM and AFM measurements.
引用
收藏
页码：683 / 687
页数：5
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