Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3 interlayer

被引：38

作者：

Wang, T. ^{[1
]}

Wu, H. ^{[1
]}

Zheng, H. ^{[1
,2
]}

Wang, J. B. ^{[1
,2
]}

Wang, Z. ^{[1
]}

Chen, C. ^{[1
]}

Xu, Y. ^{[1
]}

Liu, C. ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Sch Phys & Technol, Ctr Electron Microscopy, Wuhan 430072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 14期

基金：

中央高校基本科研业务费专项资金资助;

关键词：

FABRICATION; HETEROJUNCTIONS; ELECTROLUMINESCENCE; SEMICONDUCTORS; EMISSION;

D O I：

10.1063/1.4801761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar m-plane ZnO films are deposited on GaN (0002) with a 10 nm Al2O3 interlayer by atomic layer deposition. The growth direction of the ZnO films directly on GaN (0002) is [70 (7) over bar4] (perpendicular to (10 (1) over bar1) plane), whereas with the Al2O3 interlayer it changes into [10 (1) over bar0]. With the Al2O3 interlayer, the m-plane ZnO films are presented and the leakage current of the heterojunctions dramatically reduces. The electroluminescence spectra of the n-ZnO/Al2O3/p-GaN heterojunctions are dominated by a blue emission under forward biases, whereas it is violet under reverse biases. (C) 2013 AIP Publishing LLC.

引用

页数：4

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