First-principles study of surface and interfacial chemistry in silicon anodes

被引：0
|
作者：
Greeley, Jeffrey P. [1 ]
Chan, M. [1 ]
机构：
[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2011年 / 242卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
17-COMP
引用
收藏
页数：1
相关论文
共 50 条
  • [21] First-Principles Calculation for Interfacial Energy of Void Defect in CZ Silicon Crystal
    Nishimoto, Manabu
    Sueoka, Koji
    Motooka, Teruaki
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2011, 75 (11) : 640 - 644
  • [22] First-principles study of hydrogen incorporation in multivacancy in silicon
    Akiyama, T
    Oshiyama, A
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2001, 70 (06) : 1627 - 1634
  • [23] First-principles study of silicon nanowires with different surfaces
    Gao, Mingzhi
    You, Siyu
    Wang, Yan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 3303 - 3309
  • [24] First-principles study on piezoresistance effect in silicon nanowires
    Nakamura, Koichi
    Isono, Yoshitada
    Toriyama, Toshiyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (06) : 5132 - 5138
  • [25] Interaction of nucleobases with silicon nanowires: A first-principles study
    Zhong, Xiaoliang
    Slough, William J.
    Pandey, Ravindra
    Friedrich, Craig
    CHEMICAL PHYSICS LETTERS, 2012, 553 : 55 - 58
  • [26] First-principles pseudopotential study of the structural phases of silicon
    Needs, R. J.
    Mujica, A.
    Physical Review B: Condensed Matter, 51 (15):
  • [27] First-principles study of copper contamination in silicon semiconductor
    Chen, Pei
    Li, Yadong
    Qin, Fei
    An, Tong
    Dai, Yanwei
    Zhang, Min
    Liu, Minghui
    Zhang, Lipeng
    SURFACES AND INTERFACES, 2022, 31
  • [28] Saturated carboxylic acids on silicon: a first-principles study
    Cucinotta, C
    Ruini, A
    Caldas, MJ
    Molinari, E
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 1067 - 1068
  • [29] First-principles study on piezoresistance effect in silicon nanowires
    Nakamura, Koichi
    Isono, Yoshitada
    Toriyama, Toshiyuki
    Japanese Journal of Applied Physics, 2008, 47 (6 PART 2): : 5132 - 5138
  • [30] First-principles study of silicon nanowires with different surfaces
    Gao, Mingzhi
    You, Siyu
    Wang, Yan
    Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 3303 - 3309
12345