Design of A Neural Recording Amplifier with Tunable Pseudo Resistors

被引：0

作者：

Yao, Kai-Wen ^{[1
]}

Gong, Cihun-Siyong Alex ^{[2
]}

Yang, Shan-Ci ^{[1
]}

Shiue, Muh-Tian ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli, Taiwan

[2] Ind Technol Res Inst, Chungli, Taiwan

来源：

2011 IEEE INTERNATIONAL SOC CONFERENCE (SOCC) | 2011年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper describes a voltage-controlled pseudo-resistor with widely available operating voltage range applied to neural recording amplifier designs. The proposed pseudo-resistor which consists of serial-connected PMOS device and an auto-tuning circuit provides ultra-high resistance to cancel DC offset from electrode-electrolyte interface. The proposed design has been estimated in standard CMOS 0.18-mu m process, achieving midband gain of 40 dB, bandwidth from 0.4 Hz to 7 kHz, input-referred noise of 5.98 mu Vrms, calculated NEF of 7.2, and 3.1-mu W power consumption.

引用

页码：376 / 379

页数：4

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