Characterizing semiconductor materials with terahertz radiation pulses

被引：1

作者：

Krotkus, A. ^{[1
]}

Adomavicius, R. ^{[1
]}

Pacebutas, V. ^{[1
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

SIXTH INTERNATIONAL CONFERENCE ON ADVANCED OPTICAL MATERIALS AND DEVICES (AOMD-6) | 2008年 / 7142卷

关键词：

Terahertz; semiconductor characterization; nonlinear optics; electron dynamics;

D O I：

10.1117/12.816869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental techniques that exploit pulses of the electromagnetic radiation with characteristic spectra covering the frequency range between few hundreds GHz and few THz and their applications in the characterization of various semiconductor materials are reviewed. The list of material parameters that can be determined by using pulsed THz techniques includes, among other, carrier lifetimes, their energy and momentum relaxation times, inter-valley separation in the conduction band, and nonlinear optical susceptibilities of the material.

引用

页数：12

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