Pulsed laser deposition of carbon nitride thin films from graphite targets

被引：20
|
作者：
Suda, Y
Nakazono, T
Ebihara, K
Baba, K
Aoqui, S
机构：
[1] Sasebo Natl Coll Technol, Dept Elect Engn, Nagasaki 85711, Japan
[2] Kumamoto Univ, Dept Comp Sci & Elect Engn, Kumamoto 860, Japan
[3] Technol Ctr Nagasaki, Nagasaki 856, Japan
[4] Kumamoto Inst Technol, Ikeda, Kumamoto 860, Japan
来源：
CARBON | 1998年 / 36卷 / 5-6期
关键词：
carbon composites; infrared spectroscopy; Raman spectroscopy; scanning electron spectroscopy (SEM);
D O I：
10.1016/S0008-6223(98)00004-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Carbon nitride thin films were synthesized on Si(100) substrates by a pulsed Nd:YAG laser deposition. The laser beam is incident on the high-purity graphite targets. The films are grown using an energy density 3.8 J cm(-2) at a laser repetition rate of 10 Hz. The nitrogen gas pressure in the chamber is 10.0 Pa. Morphology features of the films have been obtained by employing the technique of scanning electron microscopy. Auger electron spectroscopy has been used to obtain compositional information about the films. The N/C composition ratio was found to vary from zero to 0.32 depending on deposition conditions. IR absorption spectra show two characteristic bands: a broad band composed of the graphite G-band and disordered D-band of carbon, and another associated with C=N triple bonds. Raman spectra have also been used to characterize the films. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：771 / 774
页数：4
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