The characterization of carbon nitride alloy thin films deposited by pulsed laser deposition

被引：0
|
作者：
Rusop, M [1 ]
Tian, XM
Soga, T
Jimbo, T
Umeno, M
机构：
[1] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Res Ctr Micro Struct Devices, Nagoya, Aichi 4668555, Japan
[3] Chubu Univ, Dept Elect Engn, Kasugai, Aichi 4878501, Japan
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2002年 / 386卷
关键词：
nitrogen; carbon nitride; carbon nitride alloy; amorphous carbon nitride; amorphous carbon; pulsed laser deposition;
D O I：
10.1080/713738828
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Carbon nitride (CNx) alloy thin films were deposited by pulsed laser deposition (PLD) with varying nitrogen gas pressure (NP) from 0.1 to 800 mTorr at 20degreesC of substrate temperature (ST) and with varying ST from 20 to 500degreesC at 0.8 Torr of NP. The effects of the NP and ST on the composition, structural and electrical properties of the nitrogen (N) incorporated camphoric carbon (CC) films have been investigated by standard measurement techniques. We found that, the amorphous structure of CNx films can be changed by NP and ST, and the CNx films with high N content have relatively high electrical resistivity.
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收藏
页码：89 / 96
页数：8
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