Structural characterization of amorphous carbon nitride thin films prepared by pulsed laser deposition

被引：1
|
作者：
Aoi, Y [1 ]
Sakurada, K [1 ]
Ono, K [1 ]
Kamijo, E [1 ]
机构：
[1] Ryukoku Univ, Fac Sci & Technol, Otsu, Shiga 5202194, Japan
来源：
EURO CERAMICS VII, PT 1-3 | 2002年 / 206-2卷
关键词：
carbon nitride; thin film; structural characterization; pulsed laser deposition;
D O I：
10.4028/www.scientific.net/KEM.206-213.531
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Amorphous carbon nitride thin films were deposited by pulsed laser deposition in nitrogen atmosphere and under nitrogen radical beam irradiation. The deposited films were characterized by scanning electron microscope, x-ray photoelectron spectroscopy (XPS), Raman scattering and Fourier transform infrared spectroscopy (FTIR). The maximum N/C ratio of the deposited film was 0.24 in this experimental. Structural characterization by XPS indicated that the nitrogen atoms in the film were mainly bonded in N-sp(3)C and N-sp(2)C configurations. The ratio of N-sp(3)C slightly increased and the ratio of N-sp(2)C decreased with increasing NIC atomic ratio of the deposited film. FTIR and Raman spectra indicated that N-spC are small as compared with N-sp(3)C and N-sp(2)C.
引用
收藏
页码：531 / 534
页数：4
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