Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

被引：9

作者：

Ghasemi, A. ^{[1
]}

Kepaptsoglou, D. ^{[2
]}

Collins-McIntyre, L. J. ^{[3
]}

Ramasse, Q. ^{[2
]}

Hesjedal, T. ^{[3
]}

Lazarov, V. K. ^{[1
]}

机构：

[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[2] SuperSTEM Lab, SciTech Daresbury Campus, Daresbury WA4 4AD, Cheshire, England

[3] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

英国工程与自然科学研究理事会;

关键词：

TOPOLOGICAL INSULATORS; BI2TE3;

D O I：

10.1038/srep26549

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We present a study of the structure and chemical composition of the Cr-doped 3D topological insulator Bi2Se3. Single-crystalline thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemical properties determined on an atomic level by aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A regular quintuple layer stacking of the Bi2Se3 film is found, with the exception of the first several atomic layers in the initial growth. The spectroscopy data gives direct evidence that Cr is preferentially substituting for Bi in the Bi2Se3 host. We also show that Cr has a tendency to segregate at internal grain boundaries of the Bi2Se3 film.

引用

页数：5

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