Gold nanoparticles via alloy decomposition and their application to nonvolatile memory

被引：18
|
作者：
Chandra, A [1 ]
Clemens, BM [1 ]
机构：
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2149512
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A technique for fabricating Au-rich nanoparticles via phase separation and subsequent oxidation of amorphous Au25Si75 sputtered thin films is presented. Nanoparticles formed in this manner are surrounded by SiO2 and have an average diameter of 2.88 nm with an aerial density of 1.9x10(12) cm(-2). Au-rich nanoparticles are incorporated into capacitor structures and the capacitance-voltage behavior is characterized. Significant hysteresis is observed and the flat-band voltage shift is attributed to charge storage due to the presence of the metal nanoparticles.
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页码：1 / 3
页数：3
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