Electrical transport through heterojunctions of single-walled carbon/silicon carbide/carbon nanotubes

被引:10
|
作者
Jia, Jianming [1 ,2 ]
Ju, Shin-Pon [3 ]
Shi, Daning [2 ]
Lin, Kuan-Fu [3 ]
机构
[1] Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, Huaian 223300, Jiangsu, Peoples R China
[2] Nanjing Univ Aeronaut & Astronaut, Dept Phys, Nanjing 210016, Jiangsu, Peoples R China
[3] Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan
基金
中国国家自然科学基金;
关键词
SILICON-CARBIDE; CARBON NANOTUBES; AB-INITIO; NANOWIRES; NANORODS; NITRIDE;
D O I
10.1063/1.3673793
中图分类号
O59 [应用物理学];
学科分类号
摘要
The transport properties of heterojunctions composed of SiC nanotubes (SiCNTs) with different length coupled between metallic carbon nanotubes (CNTs) have been investigated using a combined density-functional theory and nonequilibrium Green's function formalism. It is shown that the conductance of heterojunction decreases exponentially with the increasing length of SiCNT. The current-voltage curve of the system is linear for short SiCNT, but becomes gradually nonlinear for longer SiCNT, indicating a transition from metallic characteristics to semiconductor-like behavior. The observed trends can be understood by the electron tunneling between metallic CNTs. The present results provide insights into the physical mechanism of heterojunctions and are useful for their applications in electronic devices. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3673793]
引用
收藏
页数:6
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