An analytical model for optimizing the performance of graphene based silicon Schottky barrier solar cells

被引：14

作者：

Arefinia, Zahra ^{[1
]}

Asgari, Asghar ^{[1
,2
]}

机构：

[1] Univ Tabriz, Res Inst Appl Phys & Astron, Tabriz, Iran

[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 35卷

关键词：

Analytical model; Conversion efficiency; Graphene; Solar cell; HIGH-EFFICIENCY; WORK FUNCTION; COEFFICIENT; ABSORPTION;

D O I：

10.1016/j.mssp.2015.02.030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a model taking into account the effects of carrier loss mechanisms has been developed. The model simulates the photovoltaic properties of the graphene/n-type silicon Schottky barrier solar cells (G/n-Si_SBSC), and it can reproduce the experimentally determined parameters of the G/n-Si_SBSC. To overcome the low efficiencies of G/n-Si_SBSC, their performances have been optimized by modifying the work function of graphene and Si properties, accounted for variation of its thickness and doping level. The obtained results show that the work function of graphene has the major impact on the device performance. Also, the temperature dependence of the G/n-Si_SBSC performance is investigated. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：181 / 188

页数：8

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