The characterization of boron-doped carbon nanotube arrays

被引：40
|
作者：
Chen, CF [1 ]
Tsai, CL [1 ]
Lin, CL [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan
来源：
DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 09期
关键词：
nanotubes; p-type doping; chemical vapor deposition; field emission;
D O I：
10.1016/S0925-9635(03)00181-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, we directly synthesized boron-doped carbon nanotubes (CNTs) by using trimethylborate (B(OCH3)(3)) as doping sources in a microwave plasma chemical vapor deposition system (MPCVD). Doping boron causes the growth rate of CNTs to decrease. This might be due to the high oxygen content contained in the doping source that induces oxidation of graphite. The bamboo-like nanostructure of the carbon tubes disappeared with boron doping. Raman spectrum shows the higher I-D/I-G ratio in boron-doped CNTs. This implies the decrease of graphitization in boron-doped CNTs. In addition, doping boron could enhance the field emission property by increasing the current density by more than 30% (from 350 to 470 mA/cm(2) at 2.2 V/mum). (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1500 / 1504
页数：5
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