Microprocessing machinability of organic material for semiconductor packaging by 248 nm excimer laser

被引:0
|
作者
Suwa, Akira [1 ]
Fujimoto, Junichi [1 ]
Kawasuji, Yasufumi [1 ]
Kobayashi, Masakazu [1 ]
Kakizaki, Kouji [1 ]
机构
[1] Gigaphoton Inc, 400 Yokokurashinden, Oyama, Tochigi 3238558, Japan
关键词
248 nm excimer laser; organic material; build-up film;
D O I
10.1117/12.2578165
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An organic build-up film is used as the substrate material for a semiconductor multi-die package. However, the miniaturization of the organic build-up film process by the commonly used 355 nm UV laser has almost reached the limit due to its long wavelength. Therefore, to miniaturize the build-up film process, it is necessary to use an excimer laser with a shorter wavelength than the UV laser. In addition, the high photon energy due to the short wavelength of the excimer laser means the thermal effect of the material can be reduced by direct photon absorption. We have developed several types of DUV excimer lasers. One of them is a high power 248 nm excimer laser with free spectrum operation. The 248 nm excimer laser can be applied to the process of organic materials for semiconductor packages. We are developing the processing of organic materials by 248 nm excimer laser. The organic materials are processed directly by the irradiation using the mask by 248 nm excimer laser. We report microdrilling processability of less than 20 mu m diameter for a build-up film using a 248 nm excimer laser. The dependence of the taper angle, processing rate on the fluence for various via hole diameters was evaluated for major commercial build-up films. The results of this study indicate the appropriate selection of build-up film material and excimer laser processing fluence to achieve the processing target diameter and taper angle.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Study on damage of CaF2 windows irradiated by 248nm ultraviolet excimer laser
    Wang, Xi
    Hu, Yue
    Wu, Jiacheng
    Li, Xin
    Shao, Jingzhen
    PACIFIC-RIM LASER DAMAGE 2019: OPTICAL MATERIALS FOR HIGH-POWER LASERS, 2019, 11063
  • [42] SUB-0.5 MU-M LITHOGRAPHY USING AN EXCIMER LASER AT 248-NM
    KUNG, EH
    CHENG, M
    NALAMASU, O
    TIMKO, AG
    CASE, CB
    POL, V
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3030 - 3036
  • [43] Study on precision machining Al2O3 by 248 nm KrF excimer laser
    Jiang, Chao
    Wang, Youqing
    Hu, Shaoliu
    Li, Bo
    Jiguang Zazhi/Laser Journal, 2002, 23 (02):
  • [44] LASER MULTIPHOTON IONIZATION SPECTRUM OF ALCH3 RADICALS FORMED BY UV EXCIMER LASER PHOTOLYSIS OF GASEOUS TMA AT 248 NM AND 193 NM
    ZHANG, Y
    STUKE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07): : L1349 - L1351
  • [45] Laser multiphoton ionization spectrum of AlCH3 radicals formed by UV excimer laser photolysis of gaseous TMA at 248 nm and 193 nm
    Zhang, Y.
    Stuke, M.
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (07):
  • [46] EXCIMER LASER IRRADIATION OF CARDIOVASCULAR TISSUES - STANDARDIZED COMPARISON OF 193-NM, 248-NM, 308-NM, AND 351-NM WAVELENGTHS
    ISNER, JM
    DECKELBAUM, LI
    DONALDSON, RF
    CLARKE, RH
    LALIBERTE, SM
    AHARON, AS
    SALEM, DN
    CLINICAL RESEARCH, 1985, 33 (03): : A742 - A742
  • [47] Microchannel Fabrication in Fused Quartz by Backside Laser-Induced Plasma Ablation Using 248 nm KrF Excimer Laser
    Zhao, Yu
    Li, Qian
    Wang, Zhengfei
    Dai, Ziruo
    Chen, Tao
    APPLIED SCIENCES-BASEL, 2019, 9 (24):
  • [48] Co-occurrence of photochemical and thermal effects during laser polymer ablation via a 248-nm excimer laser
    Feng, Y
    Liu, ZQ
    Yi, XS
    APPLIED SURFACE SCIENCE, 2000, 156 (1-4) : 177 - 182
  • [49] CHANGES IN GENE-EXPRESSION BY 193-NM AND 248-NM EXCIMER LASER-RADIATION IN CULTURED HUMAN FIBROBLASTS
    RIMOLDI, D
    FLESSATE, DM
    SAMID, D
    RADIATION RESEARCH, 1992, 131 (03) : 325 - 331
  • [50] Excimer laser cleaning of Si(100) surfaces at 193 and 248 nm studied by LEED, AES and XPS spectroscopies
    Larciprete, R
    Borsella, E
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 76 : 607 - 612