4H-SiC Avalanche Photodiodes for 280 nm UV Detection

被引：0
|
作者：
Cha, Ho-Young [1 ]
Sung, Hyuk-Kee [1 ]
Kim, Hyungtak [1 ]
Cho, Chun-Hyung [2 ]
Sandvik, Peter M. [3 ]
机构：
[1] Hongik Univ, Seoul 121791, South Korea
[2] Hongik Univ, Yeongi Gun 339701, South Korea
[3] GE Global Res, Niskayuna, NY 12309 USA
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2010年 / E93C卷 / 05期
关键词：
avalanche photodiode; silicon carbide; UV detection; NEAR-SURFACE; JUNCTIONS;
D O I：
10.1587/transele.E93.C.648
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We designed and fabricated 4H-SiC PIN avalanche photo-diodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of > 80% at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.
引用
收藏
页码：648 / 650
页数：3
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