Interfacial electric field enhanced charge density for robust triboelectric nanogenerators by tailoring metal/perovskite Schottky junction

Regulating the dynamic behavior of triboelectric charges between dielectric layer and metallic electrode is a promising solution to suppress charge screen effect and to improve the output performances of triboelectric nanogenerators (TENGs). Herein, the cutting-edge inorganic CsPbBr3 perovskite is used as a dielectric material to tailor metal/perovskite Schottky junction for robust TENG applications. Arising from the induced electric field, the electron transfer from perovskite to metallic nanoparticle significantly promotes the charge accumulation at the bottom electrode, which in turn increases the overall power output of TENGs. After precisely regulating the barrier height of Schottky junction by means of optimizing noble metals (Ag, Au, and Pt) and fabricating the bulk Schottky junction, the electron drift-diffusion processes and the triboelectric charge storage behavior have been carefully optimized, achieving an enhanced power density of 3.31 W m(-2) with an open-circuit voltage up to 240 V and a short-circuit current density of 4.13 mu A cm(-2). This work may give new insights into the dynamic behavior of triboelectric charges for advanced TENG platforms.