Splitting of monolayer out-of-plane A′1 Raman mode in few-layer WS2

被引:69
|
作者
Staiger, Matthias [1 ]
Gillen, Roland [1 ]
Scheuschner, Nils [1 ]
Ochedowski, Oliver [2 ]
Kampmann, Felix [1 ]
Schleberger, Marika [2 ]
Thomsen, Christian [1 ]
Maultzsch, Janina [1 ]
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ Duisburg Essen, Fak Phys & Cenide, D-47057 Duisburg, Germany
基金
欧洲研究理事会;
关键词
TRANSITION-METAL DICHALCOGENIDES; INELASTIC NEUTRON-SCATTERING; LATTICE-DYNAMICS; TUNGSTEN DISULFIDE; PHOTOLUMINESCENCE; MOS2; BULK;
D O I
10.1103/PhysRevB.91.195419
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present Raman measurements of mono-and few-layer WS2. We study the monolayer A'(1) mode around 420 cm(-1) and its evolution with the number of layers. We show that with increasing layer number there are an increasing number of possible vibrational patterns for the out-of-plane Raman mode: in N-layer WS2 there are N Gamma-point phonons evolving from the A'(1) monolayer mode. For an excitation energy close to resonance with the A excitonic transition energy, we were able to observe all of these N components, irrespective of their Raman activity. Density functional theory calculations support the experimental findings and make it possible to attribute the modes to their respective symmetries. The findings described here are of general importance for all other phonon modes in WS2 and other layered transition-metal dichalcogenide systems in the few-layer regime.
引用
收藏
页数:8
相关论文
共 50 条
  • [21] Photoluminescence enhancement in few-layer WS2 films via Au nanoparticles
    Choi, Sin Yuk
    Yip, Cho Tung
    Li, Guang-Can
    Lei, Dang Yuan
    Fung, Kin Hung
    Yu, Siu Fung
    Hao, Jianhua
    AIP ADVANCES, 2015, 5 (06)
  • [22] Saturable absorption of few-layer WS2 and WSe2 at exciton resonance
    Liang, Shuang
    Lu, Yuze
    Liu, Haimu
    Shang, Xiaohe
    Du, Rongguang
    Ji, Jiamin
    Yu, Yiling
    Zhang, Shunping
    OPTICS EXPRESS, 2025, 33 (04): : 7266 - 7277
  • [23] Observation of low-wavenumber out-of-plane optical phonon in few-layer graphene
    Shang, Jingzhi
    Cong, Chunxiao
    Zhang, Jun
    Xiong, Qihua
    Gurzadyan, Gagik G.
    Yu, Ting
    JOURNAL OF RAMAN SPECTROSCOPY, 2013, 44 (01) : 70 - 74
  • [24] Tunable Electronic Properties of Few-Layer Tellurene under In-Plane and Out-of-Plane Uniaxial Strain
    Wang, Genwang
    Ding, Ye
    Guan, Yanchao
    Wang, Yang
    Yang, Lijun
    NANOMATERIALS, 2022, 12 (05)
  • [25] Fabrication and Characterization of Few-layer Tungsten Disulfide (WS2) Field Effect Transistors
    Liu, Xi
    Huang, Heshen
    Huang, Maosen
    Liu, Zhaojun
    7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
  • [26] Tuning the electronic properties and interfacial interactions of WS2/ZrO2(001) heterostructures by an external electric field, interlayer coupling and monolayer to few-layer of WS2 sheets
    Opoku, Francis
    Govender, Penny Poomani
    MATERIALS CHEMISTRY AND PHYSICS, 2019, 224 : 107 - 116
  • [27] One-step Synthesis of Few-layer WS2 by Pulsed Laser Deposition
    Loh, Tamie A. J.
    Chua, Daniel H. C.
    Wee, Andrew T. S.
    SCIENTIFIC REPORTS, 2015, 5
  • [28] Direct Visualization of Exciton Transport in Defective Few-Layer WS2 by Ultrafast Microscopy
    Liu, Huan
    Wang, Chong
    Zuo, Zhengguang
    Liu, Dameng
    Luo, Jianbin
    ADVANCED MATERIALS, 2020, 32 (02)
  • [29] Influence of few-layer WS2 and mono-layer WS2 on passively Q-switched ytterbium-doped fibre lasers
    Fan, Luyao
    Dong, Zikai
    Guoyu, Heyang
    Guo, Jinyi
    Xu, Changxing
    Li, Kexuan
    Tian, Jinrong
    Song, Yanrong
    LASER PHYSICS, 2019, 29 (07)
  • [30] One-step Synthesis of Few-layer WS2 by Pulsed Laser Deposition
    Tamie A. J. Loh
    Daniel H. C. Chua
    Andrew T. S. Wee
    Scientific Reports, 5