Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes

被引：4

作者：

Zhang, Yang ^{[1
,2
]}

Guan, Min ^{[2
]}

Liu, Xingfang ^{[2
]}

Zeng, Yiping ^{[2
]}

机构：

[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, Beijing 100083, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

resonant tunneling diode; I-V characteristics; molecular beam epitaxy; INTERFACE ROUGHNESS; OSCILLATION;

D O I：

10.1186/1556-276X-6-603

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.

引用

页码：1 / 6

页数：6

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