Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes

被引：4
|
作者：
Zhang, Yang [1 ,2 ]
Guan, Min [2 ]
Liu, Xingfang [2 ]
Zeng, Yiping [2 ]
机构：
[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, Beijing 100083, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
基金：
北京市自然科学基金; 中国国家自然科学基金;
关键词：
resonant tunneling diode; I-V characteristics; molecular beam epitaxy; INTERFACE ROUGHNESS; OSCILLATION;
D O I：
10.1186/1556-276X-6-603
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.
引用
收藏
页码：1 / 6
页数：6
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