Optical and Morphological Properties of Porous Silicon Grown at Low Hydrofluoric Acid Concentration by Electrochemical Anodization

被引：0

作者：

Moura, M. S. ^{[1
]}

Costa, A. J. ^{[1
,2
]}

Schnitman, L. ^{[3
]}

Fontana, M. ^{[1
,3
]}

机构：

[1] Univ Fed Bahia, Dept Elect Engn, Nanostruct Mat Lab, Salvador, BA, Brazil

[2] Fed Inst Bahia, Santo Amaro, Brazil

[3] Univ Fed Bahia, Ctr Technol Qualificat Ind Automat, Salvador, BA, Brazil

来源：

2015 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2015年

关键词：

Porous Silicon; Photoluminescence; Optical absorption spectrum; Quantum confinement effect; LIGHT-EMITTING-DIODES; QUANTUM CONFINEMENT; GAS SENSORS; SOLAR-CELLS; SPECTRA; FILMS; SI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work the correlation of the photoluminescence (PL) and optical absorption spectra with low concentrations of hydrofluoridic acid (HF) within the range of 0.5 up to 5.5wt% is investigated. Therefore, P-type < 100 > silicon wafers with resistivity of 7.0 Omega.cm were electrochemically etched in HF: water: ethanol mixture at different concentrations. The absorption spectra were measured from 1.25 to 3.75eV and compared with transitions of the morphological structure of porous silicon (PS). In addition, we used a Gaussian fitting procedure on the band energy structures for modeling the PS optical absorption spectrum.

引用

页数：5

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