Optical and Morphological Properties of Porous Silicon Grown at Low Hydrofluoric Acid Concentration by Electrochemical Anodization

被引：0
|
作者：
Moura, M. S. [1 ]
Costa, A. J. [1 ,2 ]
Schnitman, L. [3 ]
Fontana, M. [1 ,3 ]
机构：
[1] Univ Fed Bahia, Dept Elect Engn, Nanostruct Mat Lab, Salvador, BA, Brazil
[2] Fed Inst Bahia, Santo Amaro, Brazil
[3] Univ Fed Bahia, Ctr Technol Qualificat Ind Automat, Salvador, BA, Brazil
来源：
2015 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2015年
关键词：
Porous Silicon; Photoluminescence; Optical absorption spectrum; Quantum confinement effect; LIGHT-EMITTING-DIODES; QUANTUM CONFINEMENT; GAS SENSORS; SOLAR-CELLS; SPECTRA; FILMS; SI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work the correlation of the photoluminescence (PL) and optical absorption spectra with low concentrations of hydrofluoridic acid (HF) within the range of 0.5 up to 5.5wt% is investigated. Therefore, P-type < 100 > silicon wafers with resistivity of 7.0 Omega.cm were electrochemically etched in HF: water: ethanol mixture at different concentrations. The absorption spectra were measured from 1.25 to 3.75eV and compared with transitions of the morphological structure of porous silicon (PS). In addition, we used a Gaussian fitting procedure on the band energy structures for modeling the PS optical absorption spectrum.
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页数：5
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