HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

被引：148

作者：

Fang, Z. ^{[1
,2
]}

Yu, H. Y. ^{[1
,2
]}

Li, X. ^{[1
]}

Singh, N. ^{[1
]}

Lo, G. Q. ^{[1
]}

Kwong, D. L. ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 637998, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期

关键词：

HfOx; resistive random accessmemory (RRAM); uniformity; SWITCHING UNIFORMITY;

D O I：

10.1109/LED.2011.2109033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a significantly improved uniformity of device parameters (for cycle-to-cycle uniformity within one device and device-to-device uniformity), such as set voltage, reset voltage, and HRS and LRS resistance distributions, is successfully demonstrated on HfOx/TiOx multilayer (ML)-based resistive switching devices, as compared with HfOx-based single-layer device. In addition, the reported ML devices are free from forming process, which is greatly beneficial from the viewpoint of RRAM circuit operation. It is believed that both the Ti doping effect and the confinement of conduction filament within different dielectrics layers contribute to the improvement.

引用

页码：566 / 568

页数：3

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