Tunable Spin Loading and T1 of a Silicon Spin Qubit Measured by Single-Shot Readout

被引：136

作者：

Simmons, C. B. ^{[1
]}

Prance, J. R. ^{[1
]}

Van Bael, B. J. ^{[1
]}

Koh, Teck Seng ^{[1
]}

Shi, Zhan ^{[1
]}

Savage, D. E. ^{[1
]}

Lagally, M. G. ^{[1
]}

Joynt, R. ^{[1
]}

Friesen, Mark ^{[1
]}

Coppersmith, S. N. ^{[1
]}

Eriksson, M. A. ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 15期

关键词：

ELECTRON-SPIN; QUANTUM; SPECTROSCOPY;

D O I：

10.1103/PhysRevLett.106.156804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T-1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.

引用

页数：4

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