Comparison study of GaN films grown on porous and planar GaN templates*

被引：4

作者：

Ding, Shan ^{[1
]}

Li, Yue-Wen ^{[1
]}

Xiu, Xiang-Qian ^{[1
]}

Hua, Xue-Mei ^{[1
]}

Xie, Zi-Li ^{[1
]}

Tao, Tao ^{[1
]}

Chen, Peng ^{[1
]}

Liu, Bin ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, You-Dou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

来源：

CHINESE PHYSICS B | 2020年 / 29卷 / 03期

基金：

国家重点研发计划;

关键词：

GaN; porous template; stress; OPTICAL-PROPERTIES; FABRICATION; CRYSTAL;

D O I：

10.1088/1674-1056/ab6c48

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition (MOCVD)-GaN template by halide vapor phase epitaxy (HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence (PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from beta-Ga2O3 film as a novel promising template is suitable for the growth of stress-free GaN films.

引用

页数：3

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