Nondegenerate Two- and Three-Photon Nonlinearities in Semiconductors

被引：2
|
作者：
Reichert, Matthew [1 ,2 ]
Zhao, Peng [1 ]
Pattanaik, Himansu S. [1 ]
Hagan, David J. [1 ,3 ]
Van Stryland, Eric. W. [1 ,3 ]
机构：
[1] Univ Cent Florida, Coll Opt & Photon, CREOL, Orlando, FL 32816 USA
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08455 USA
[3] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
来源：
ULTRAFAST BANDGAP PHOTONICS | 2016年 / 9835卷
关键词：
Nonlinear Optics; Semiconductors; Multiphoton Absorption; Quantum Wells; BEAM DEFLECTION MEASUREMENT; 2-PHOTON ABSORPTION; REFRACTION;
D O I：
10.1117/12.2223286
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Two-photon absorption, 2PA, in semiconductors is enhanced by two orders of magnitude due to intermediate-state resonance enhancement, ISRE, for very nondegenerate (ND) photon energies. Associated with this enhancement in loss is enhancement of the nonlinear refractive index, n(2). Even larger enhancement of three-photon absorption is calculated and observed. These large nonlinearities have implications for applications including ND two-photon gain and two-photon semiconductor lasers. Calculations for enhancement of ND-2PA in quantum wells is also presented showing another order of magnitude increase in 2PA. Potential devices include room temperature gated infrared detectors for LIDAR and all-optical switches.
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页数：9
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