High-performance logic circuits constructed on single CdS nanowires

被引：143
|
作者：
Ma, Ren-Min
Dai, Lun [1 ]
Huo, Hai-Bin
Xu, Wan-Jin
Oin, G. G.
机构：
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
NANO LETTERS | 2007年 / 7卷 / 11期
关键词：
D O I：
10.1021/nl0715286
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal-semiconductor field-effect transistors (MESFETs) made on a single US nanowire (NW). The inverter has a voltage gain as high as 83, which is the highest reported so far for inverters made on one-dimensional nanomaterials. The MESFETs used in the inverter circuit show excellent transistor performance, such as high on/off current ratio (similar to 10(7)), low threshold voltage (similar to-0.4 V), and low subthreshold swing (similar to 60 mV/dec). With the assembly of three identical NW MESFETs, NOR and NAND gates have been constructed.
引用
收藏
页码：3300 / 3304
页数：5
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