Study on n-type GaN based organic-inorganic hybrid light emitting heterojunction

The organic-inorganic hybrid light-emitting devices have become research hotspot for combining both the high electron mobility of inorganic semiconductors and the extraordinary optoelectronic properties of organic semiconductors. In the research, an organic-inorganic hybrid blue fluorescent device was fabricated by employing n-type GaN on a sapphire substrate as an electron injection layer of blue organic electroluminescent device. The GaN-based device emitted blue electroluminescence at 472 nm with the maximum luminance of 36333 cd/m(2) and a turn-on voltage of 3.8 V. The maximum power efficiency, current efficiency, and external quantum efficiency of 2.24 lm/W, 5.93 cd/A and 2.93% have been achieved for GaN-based device, which is comparable to ITO-based organic light emitting diode with the identical configuration. Finally, thermal simulation results showed that GaN-based device exhibited better heat dissipation than ITO-based one, which is beneficial to reduce the device aging and improve operation lifetime.