Heat generation analysis in SOI LDMOS power transistors

被引：0

作者：

Roig, J ^{[1
]}

Flores, D ^{[1
]}

Urresti, J ^{[1
]}

Hidalgo, S ^{[1
]}

Rebollo, J ^{[1
]}

机构：

[1] Ctr Nacl Microelect, CNM, CSIC, Barcelona 08193, Catalonia, Spain

来源：

SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES OPERATING IN A HARSH ENVIRONMENT | 2005年 / 185卷

关键词：

LDMOS; SOI; self-heating; thermal management; hot spot; heat generation; power dissipation; SIMULATION; TEMPERATURE; BULK;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview of the heat generation phenomena in SOI LDMOS transistors, mainly due to the Joule effect, is provided in this work. The distribution of the heat generation along the SOI LDMOS cross-section depends on the technological and geometrical parameters and the applied bias. Reported data and results extracted from simulation, theory and experiment are used to give physical insight into the heat generation mechanisms. The analysis of the heat generation is of utmost importance to derive the 3D dynamic temperature distribution at short time operation. An accurate temperature prediction at the source, drain and channel regions is desirable for improved electro-thermal models and for the study of the electromigration in interconnects. Moreover, information on temperature peaks is crucial to understand the failure mechanisms in power LDMOS transistors.

引用

页码：167 / 178

页数：12

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