Ge-on-Si waveguides for sensing in the molecular fingerprint regime

被引:10
|
作者
Griskeviciute, Ugne [1 ]
Millar, Ross W. [1 ]
Gallacher, Kevin [1 ]
Valente, Joao [1 ]
Paul, Douglas J. [1 ]
机构
[1] Univ Glasgow, James Watt Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
来源
OPTICS EXPRESS | 2020年 / 28卷 / 04期
基金
英国工程与自然科学研究理事会;
关键词
SPECTROSCOPY;
D O I
10.1364/OE.382356
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Low loss, single mode, Ge-on-Si rib waveguides are used to demonstrated optical sensing in the molecular fingerprint region of the mid-infrared spectrum. Sensing is carried out using two spin-coated films, with strong absorption in the mid-infrared. These films are used to calibrate the modal overlap with an analyte, and therefore experimentally demonstrate the potential for Ge-on-Si waveguides for mid-infrared sensing applications. The results are compared to Fourier transform infrared spectroscopy measurements. The advantage of waveguide spectroscopy is demonstrated in terms of the increased optical interaction, and a new multi-path length approach is demonstrated to improve the dynamic range, which is not possible with conventional FTIR or attenuated total reflection (ATR) measurements. These results highlight the potential for Ge-on-Si as an integrated sensing platform for healthcare, pollution monitoring and defence applications. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
引用
收藏
页码:5749 / 5757
页数:9
相关论文
共 50 条
  • [41] Ge-on-Si Bufferless Epitaxial Growth for Photonic Devices
    Camacho-Aguilera, Rodolfo
    Cai, Yan
    Kimerling, Lionel C.
    Michel, Jurgen
    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 469 - 473
  • [42] CALCULATING THE NOISE PERFORMANCE OF A Ge-ON-Si SCHOTTKY PHOTODETECTOR
    Dutta, Himadri Sekhar
    Das, N. R.
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2011, 53 (01) : 5 - 10
  • [43] Critical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111)
    Alam, Md. Mahfuz
    Wagatsuma, Youya
    Okada, Kazuya
    Hoshi, Yusuke
    Yamada, Michihiro
    Hamaya, Kohei
    Sawano, Kentarou
    APPLIED PHYSICS EXPRESS, 2019, 12 (08)
  • [44] Analysis of Lasing From Direct Transition in Ge-on-Si
    Chow, Weng W.
    Kabuss, Julia
    Carmele, Alexander
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)
  • [45] Ge-on-Si High Efficiency SPADs at 1310 nm
    Dumas, Derek C. S.
    Kirdoda, Jaroslaw
    Vines, Peter
    Kuzmenko, Kateryna
    Millar, Ross W.
    Buller, Gerald S.
    Paul, Douglas J.
    2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2019,
  • [46] Direct Bonding of Ge-Ge Using Epitaxially Grown Ge-on-Si Wafers
    Tan, Yew Heng
    Chong, Gang Yih
    Tan, Chuan Seng
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2012, 1 (01) : P18 - P22
  • [47] Ge-on-Si for Si-based integrated materials and photonic devices
    Weixuan HU
    Buwen CHENG
    Chunlai XUE
    Shaojian SU
    Haiyun XUE
    Yuhua ZUO
    Qiming WANG
    Frontiers of Optoelectronics, 2012, 5 (01) : 41 - 50
  • [48] Optical Characterization of Ge-on-Si Grown by using RTCVD
    Kim, T. S.
    Kil, Y. -H.
    Hong, W. K.
    Yang, H. D.
    Kang, S.
    Jeong, T. S.
    Shim, K. H.
    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 381 - 386
  • [49] LASER DIODES Ge-on-Si laser will integrate with optoelectronics
    Wallace, John
    LASER FOCUS WORLD, 2010, 46 (03): : 15 - 16
  • [50] Ge-on-Si for Si-based integrated materials and photonic devices
    Hu W.
    Cheng B.
    Xue C.
    Su S.
    Xue H.
    Zuo Y.
    Wang Q.
    Frontiers of Optoelectronics, 2012, 5 (1) : 41 - 50