Direct bonding of silicon wafers with a diffusion layer

被引：0

作者：

Voronkov, VB ^{[1
]}

Guk, EG ^{[1
]}

Kozlov, VA ^{[1
]}

Shuman, VB ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 03期

关键词：

Silicon; High Surface; Silicon Wafer; Dopant Concentration; Diffusion Layer;

D O I：

10.1134/1.1262055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of solid-phase direct bonding of silicon wafers having p(+)- or n(+)-type diffusion layers with a high surface dopant concentration has been demonstrated for the first time. (C) 1998 American Institute of Physics. [S1063-7850(98)01803-5]

引用

页码：207 / 208

页数：2

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