Direct bonding of silicon wafers with a diffusion layer

被引：0
|
作者：
Voronkov, VB [1 ]
Guk, EG [1 ]
Kozlov, VA [1 ]
Shuman, VB [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia
来源：
TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 03期
关键词：
Silicon; High Surface; Silicon Wafer; Dopant Concentration; Diffusion Layer;
D O I：
10.1134/1.1262055
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The possibility of solid-phase direct bonding of silicon wafers having p(+)- or n(+)-type diffusion layers with a high surface dopant concentration has been demonstrated for the first time. (C) 1998 American Institute of Physics. [S1063-7850(98)01803-5]
引用
收藏
页码：207 / 208
页数：2
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