Sol-gel derived Pb(Zr,Ti)O3 heterolayered films by single-annealing

被引：1
|
作者：
Chen, YC [1 ]
Liang, CS
Wu, JM
Yeh, TS
Hu, LJ
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Lungtan, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 5B期
关键词：
ferroelectric; PZT; sol gel; heterolayer; buffer layer; single-annealing;
D O I：
10.1143/JJAP.42.L542
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectric Pb(Zr,Ti)O-3 heterolayered filing were prepared by the sol gel method. The adoption of PbZr0.2Ti0.8O3 (or PbZr0.2Ti0.8O3/PbZr0.8Ti0.2O3) buffer layers under a single-annealing process resulted in significant change in grain size, gradual change in composition, and Zr-rich regions in the middle of the heterolayered films. The large grain size and compatible interface between layers are good for the ferroelectric properties, and the Zr-rich layer contributes to not only the coercive field (E-c) lowering but also the improvement of fatigue endurance.
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页码：L542 / L545
页数：4
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