Lateral current spreading in SiC Schottky diodes using field-prate edge termination

被引：2

作者：

Zhang, Q ^{[1
]}

Madangarli, V ^{[1
]}

Tarplee, M ^{[1
]}

Sudarshan, TS ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

current spreading; edge termination; field-plate; forward current density; Schottky diodes;

D O I：

10.4028/www.scientific.net/MSF.338-342.1223

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Increase in the forward current density in SiC Schottky diodes with field-plate edge termination is reported for the first time. The forward current density for a given forward bias is 2-3 times higher and the reverse breakdown voltage is similar to 2 times higher for Schottky diodes with field-plate edge termination as compared to unterminated Schottky diodes with a similar Schottky contact area. A possible model to explain the higher forward current density in Schottky diodes with edge termination is proposed based on the formation of an accumulation layer underneath the oxide layer resulting in lateral current spreading under forward bias.

引用

下载

页码：1223 / 1226

页数：4

共 50 条

[21] Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes
陈丰平
张玉明
张义门
吕红亮
宋庆文
Chinese Physics B, 2010, 19 (04) : 396 - 399
[22] Field-plate design for edge termination in silicon carbide high-power Schottky diodes
Mohammad, S. Noor
Kub, Francis J.
Eddy, Charles R., Jr.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (02):
[23] Different ion implanted edge terminations for Schottky diodes on SiC
Weiss, R
Frey, L
Ryssel, H
IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2003, : 139 - 142
[24] Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination
Remashan, K.
Huang, Wen-Pin
Chyi, Jen-Inn
MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2907 - 2915
[25] Study of edge termination structures for high power GaN Schottky diodes
Sundaramoorthy, Vinoth Kumar
Nistor, Iulian
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2270 - 2272
[26] High voltage Schottky barrier diodes on p-type SiC using metal-overlap on a thick oxide layer as edge termination
Zhang, Q
Madangarli, V
Soloviev, S
Sudarshan, TS
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 75 - 80
[27] INFLUENCE OF THE EDGE EFFECTS ON THE FLOW OF THE CURRENT IN SCHOTTKY DIODES
MAMEDOV, RK
NABIEV, MA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 206 - 208
[28] Lateral current spreading in ridge waveguide laser diodes
Achtenhagen, M
Hardy, A
APPLIED PHYSICS LETTERS, 1999, 74 (10) : 1364 - 1366
[29] Electric field breakdown of lateral Schottky diodes of diamond
Teraji, Tokuyuki
Koizumi, Satoshi
Koide, Yasuo
Ito, Toshimichi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (8-11): : L196 - L198
[30] Comparative evaluation of high current SiC schottky diodes and SiPN junction diodes
Jorda, X
Tournier, D
Vellvehi, M
Pérez, A
Pérez, J
Godignon, P
Millan, J
2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS, 2005, : 87 - 90

← 1 2 3 4 5 →