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The principles of creating new-generation magnetic memory
被引:0
|作者:
Morosov, A. I.
[1
]
Sigov, A. S.
[1
]
机构:
[1] Moscow State Tech Univ Radioengn Elect & Automat, Moscow, Russia
关键词:
ELECTRIC-FIELD CONTROL;
EXCHANGE;
MAGNETORESISTANCE;
D O I:
10.1134/S1019331614060069
中图分类号:
N09 [自然科学史];
B [哲学、宗教];
学科分类号:
01 ;
0101 ;
010108 ;
060207 ;
060305 ;
0712 ;
摘要:
One of substantial achievements in the development of information technologies is the increase in the capacity of digital media and the decrease in their size. A paper heard at an RAS Presidium meeting reports about the distinguishing features of multilayered magnetic structures and their characteristic fundamental effects, the discovery of which allowed for this technological breakthrough, as well as about modern studies aimed at further enhancement of information reading and recording technologies. The authors focus on the creation of magnetoresistive memory with electric field-assisted writing.
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页码:407 / 412
页数:6
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