Effect of thermal treatment on the morphology of PLZT thin films prepared from polymeric precursor method

被引：0

作者：

González, AHM ^{[1
]}

Simoes, AZ ^{[1
]}

Varela, JA ^{[1
]}

Zaghete, MA ^{[1
]}

Longo, E ^{[1
]}

机构：

[1] UNESP, Inst Quim, Lab Interdisciplinar Ceram, BR-14800900 Araraquara, SP, Brazil

来源：

ADVANCED POWDER TECHNOLOGY II | 2001年 / 189-1卷

关键词：

PLZT; polymeric precursor; thin film;

D O I：

10.4028/www.scientific.net/KEM.189-191.155

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lead lanthanum zirconate titanate (PLZT) thin films with (9/65/35) stoichiometry were prepared by dip coating from polymeric precursor method. The films deposited on silicon (100) substrates, were thermally treated from 450 degrees to 700 degreesC for 6 hours in order to study the influence of thermal treatment on the crystallinity, microstructure, grain size and roughness of the final film. X-ray diffraction results showed that PLZT phase crystallizes at low temperature (500 degreesC) and present preferential orientation. It was observed try scanning electron microscopy (SEM) that it is possible to obtain dense thin films at temperatures around 650 degreesC. The atomic force microscopy (AFM) studies showed that the grain size and roughness are strongly influenced by the annealing temperature.

引用

页码：155 / 160

页数：6

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