Effect of thermal treatment on the morphology of PLZT thin films prepared from polymeric precursor method

被引：0

作者：

González, A.H.M. ^{[1
]}

Simões, A.Z. ^{[1
]}

Varela, J.A. ^{[1
]}

Zaghete, M.A. ^{[1
]}

Longo, Elson ^{[2
]}

机构：

[1] Laboratorio Interdisciplinar C., Instituto de Química, UNESP, CEP 14800-900 Araraquara SP, Brazil

[2] Departamento de Química, UFSCar, C.P. 676, CEP 13565-905 São Carlos SP, Brazil

来源：

Key Engineering Materials | 2001年 / 189-191卷

关键词：

Annealing - Atomic force microscopy - Crystal microstructure - Crystal orientation - Grain size and shape - Lead compounds - Morphology - Scanning electron microscopy - Silicon - Stoichiometry - Surface roughness - X ray diffraction analysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Lead lanthanum zirconate titanate (PLZT) thin films with (9/65/35) stoichiometry were prepared by dip coating from polymeric precursor method. The films deposited on silicon (100) substrates, were thermally treated from 450° to 700°C for 6 hours in order to study the influence of thermal treatment on the crystallinity, microstructure, grain size and roughness of the final film. X-ray diffraction results showed that PLZT phase crystallizes at low temperature (500°C) and present preferential orientation. It was observed by scanning electron microscopy (SEM) that it is possible to obtain dense thin films at temperatures around 650°C. The atomic force microscopy (AFM) studies showed that the grain size and roughness are strongly influenced by the annealing temperature.

引用

页码：155 / 160

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