Application of advanced metal-oxide-semiconductor transistor in next generation, silicon resonant tunneling MOS transistor, to new logic circuit

被引：2

作者：

Matsuo, N ^{[1
]}

Kihara, H ^{[1
]}

Takami, Y ^{[1
]}

机构：

[1] Yamaguchi Univ, Dept Elect & Elect Engn, Ube, Yamaguchi 7558611, Japan

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 11期

关键词：

SRTMOST; multi-valued; logic circuit;

D O I：

10.1016/S0038-1101(03)00110-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of the Si resonant tunneling metal-oxide-semiconductor transistor (SRTMOST), which has double-barriers at both edges of the channel, is examined from viewpoints of the substitution for conventional metal-oxide-semiconductor field-effect transistor in next generation circuit. The feasibility of multi(equal to or larger than three)-valued logic circuits which are composed of the p-SRTMOST and the n-SRTMOST is shown theoretically. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1969 / 1972

页数：4

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