ZnO nanorods growth on sapphire substrates using aqueous solution with microwave heating and their photoluminescence properties

被引：1
|
作者：
Ogata, Ken-ichi [1 ]
Dobashi, Hideaki [1 ]
Koike, Kazuto [1 ]
Sasa, Shigehiko [1 ]
Inoue, Masataka [1 ]
Yano, Mitsuaki [1 ]
机构：
[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6 | 2010年 / 7卷 / 06期
关键词：
ZnO; nanoparticles; chemical synthesis; photoluminescence; annealing; R-PLANE SAPPHIRE; A-PLANE; EPITAXIAL-GROWTH; ARRAYS; FILMS;
D O I：
10.1002/pssc.200983234
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO nanorods were grown on a-, c- and r-plane sapphire substrates using aqueous solution with microwave irradiation heating. ZnO nanorods about 200 nm diameter with c-axis orientation were grown independently on the orientation of the substrates. Photoluminescence (PL) spectrum at 6 K showed a dominant peak at 3.3609 eV (I-6) with the width as narrow as 2.2 meV comparable to that of epitaxially grown single-crystalline ZnO films. The PL properties were improved by thermal annealing process without generating structural defects. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1592 / 1594
页数：3
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