ZnO nanorods growth on sapphire substrates using aqueous solution with microwave heating and their photoluminescence properties

被引：1

作者：

Ogata, Ken-ichi ^{[1
]}

Dobashi, Hideaki ^{[1
]}

Koike, Kazuto ^{[1
]}

Sasa, Shigehiko ^{[1
]}

Inoue, Masataka ^{[1
]}

Yano, Mitsuaki ^{[1
]}

机构：

[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6 | 2010年 / 7卷 / 06期

关键词：

ZnO; nanoparticles; chemical synthesis; photoluminescence; annealing; R-PLANE SAPPHIRE; A-PLANE; EPITAXIAL-GROWTH; ARRAYS; FILMS;

D O I：

10.1002/pssc.200983234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO nanorods were grown on a-, c- and r-plane sapphire substrates using aqueous solution with microwave irradiation heating. ZnO nanorods about 200 nm diameter with c-axis orientation were grown independently on the orientation of the substrates. Photoluminescence (PL) spectrum at 6 K showed a dominant peak at 3.3609 eV (I-6) with the width as narrow as 2.2 meV comparable to that of epitaxially grown single-crystalline ZnO films. The PL properties were improved by thermal annealing process without generating structural defects. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1592 / 1594

页数：3

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