Evolution of high-speed long-wavelength vertical-cavity surface-emitting lasers

被引：9

作者：

Hofmann, W. ^{[1
,2
,3
,4
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Tech Univ Berlin, Zentrum Nanophoton, D-10623 Berlin, Germany

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 01期

关键词：

MU-M VCSELS; BURIED TUNNEL-JUNCTION; 1.55-MU-M VCSEL; SEMICONDUCTOR-LASERS; OUTPUT POWER; WDM-PONS; MODULATION; GHZ; TRANSMISSION; PERFORMANCE;

D O I：

10.1088/0268-1242/26/1/014011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSELs) covering the long-wavelength range from 1.3 mu m to 1.6 mu m have been developed in the last decade and achieved remarkable performance. The InP-based monolithic approach with a BTJ as a current aperture and an integrated gold heat sink, which originated at the Walter Schottky Institute, is reviewed in this review. Cutting-edge device performance like error-free operation at 25 Gb s(-1) data rate, large VCSEL arrays with high output powers, widely tunable devices, or novel nano-photonic device concepts could be realized.

引用

页数：11

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