Study of Au, Ni-(n)ZnSe Thin Film Schottky Barrier Junctions

被引：2

作者：

Chaliha, Sumbit ^{[1
]}

Borah, Mothura Nath ^{[2
]}

Sarmah, P. C. ^{[3
]}

Rahman, A. ^{[4
]}

机构：

[1] Bahona Coll, Dept Phys, Jorhat 785101, Assam, India

[2] DR Coll, Dept Phys, Golaghat 785621, India

[3] NE Inst Sci & Technol, Div Elect, Jorhat 785006, Assam, India

[4] Gauhati Univ, Dept Phys, Gauhati 781014, India

来源：

INTERNATIONAL JOURNAL OF THERMOPHYSICS | 2010年 / 31卷 / 10期

关键词：

Diode ideality factor; Schottky barrier; Thermal evaporation; Zinc selenide; ZINC SELENIDE; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; ZNSE; HETEROJUNCTIONS; PHOTODETECTORS; PROGRESS; DEVICES; DIODES; LAYER;

D O I：

10.1007/s10765-009-0555-9

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin films of doping concentrations up to 9.7 x 10(14) cm (-3) have been fabricated with Au and Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions of different doping concentrations exhibited rectifying current-voltage characteristics with a non-saturating reverse current. From the current-voltage characteristics, the different junction parameters such as ideality factor, saturation current density, series resistance, etc., were measured. Both types of junctions were found to possess a high ideality factor and a high series resistance. The barrier heights of the junctions were measured from Richardson plots and found to be around 0.8 eV. The structures were found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The diode quality as well as the photovoltaic performance of the diodes were improved following a short heat treatment in vacuum.

引用

页码：2030 / 2039

页数：10

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