A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

被引：11

作者：

Ghoreishi, Seyed Saleh ^{[1
]}

Saghafi, Kamyar ^{[2
]}

Yousefi, Reza ^{[1
]}

Moravvej-Farshi, Mohammad Kazem ^{[3
]}

机构：

[1] Islamic Azad Univ, Nour Branch, Dept Elect Engn, Nour, Iran

[2] Shahed Univ, Dept Elect Engn, POB 18155-159, Tehran 3319118651, Iran

[3] TMU, ADSL, Fac Elect & Comp Engn, POB 14115-194, Tehran 1411713116, Iran

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 97卷

关键词：

Tunneling Graphene Nano Ribbon Field Effect Transistor (T-GNRFET); Non-Equilibrium Green's function (NEGF); Drain Induced Barrier Shortening (DIBS); Am-bipolar; WORK FUNCTION; SIMULATION; CONTACTS; FETS;

D O I：

10.1016/j.spmi.2016.06.034

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption that sub-threshold swing which is one of the important characteristics of tunneling transistors must not be degraded. In the proposed structure, dual material gates with different work functions are used. Our investigations are based on numerical simulations which self consistently solves the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green's (NEGF). The proposed device shows lower off-current and on-off ratio becomes 5order of magnitude greater than the conventional device. Also two different short channel effects: Drain Induced Barrier Shortening (DIBS) and hot-electron effect are improved in the proposed device compare to the main structure. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：277 / 286

页数：10

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