Fabrication of ultrathin epitaxial γ-Fe2O3 films by reactive sputtering

被引：95

作者：

Li, Peng ^{[1
]}

Jiang, E. Y. ^{[1
]}

Bai, H. L. ^{[1
]}

机构：

[1] Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 07期

基金：

美国国家科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; MAGNETIC-PROPERTIES; FERRIC OXIDE; THIN-FILMS; GROWTH; ALPHA-FE2O3; FE3O4;

D O I：

10.1088/0022-3727/44/7/075003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin epitaxial gamma-Fe2O3 (0 0 1) and (0 1 1) films are synthesized by reactive sputtering on corresponding MgO substrates. The average roughness of the epitaxial films increases with decreasing film thickness, and that of similar to 5 nm thick films is similar to 4.2 angstrom. The easy axis of the epitaxial gamma-Fe2O3 films is verified to be < 1 1 1 > by angular dependence of hysteresis loops measured by a vibrating sample magnetometer with a sample rotator. The saturation magnetization of the ultrathin epitaxial gamma-Fe2O3 films is close to the bulk value of similar to 90 emu cm(-3) and independent of film thickness when the thickness is above 5 nm, which is crucial for their practical applications in spin filter devices.

引用

页数：5

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