100 nm-MOSFET model for circuit simulation: Challenges and solutions

被引：0

作者：

Miura-Mattausch, M ^{[1
]}

Ueno, H

Mattausch, HJ

Morikawa, K

Itoh, S

Kobayashi, A

Masuda, H

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398526, Japan

[2] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398526, Japan

[3] Semicond Technol Acad Res Ctr, Yokohama, Kanagawa 2220033, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 06期

关键词：

MOSFET model; surface potential; device phenomena; RF applications;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The key elements of sub-100nm MOSFET modeling for circuit simulation are accurate representation of new physical phenomena arising from advancing technologies and numerical efficacy. We summarize the history of MOSFET modeling, and address difficulties faced by conventional methods. The advantage of the surface-potential-based approach will be emphasized. Perspectives for next generations will be also discussed.

引用

页码：1009 / 1021

页数：13

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